This increase is likely due to the large Fermi velocity of the Dirac surface states. Weak antilocalization was present in all samples, and remarkably the phase coherence length doubled in the porous samples. The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surfacelike. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.ĪB - The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. N2 - The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Prawer and use of his laser cutter facility at the University of Melbourne in making the shadow masks. We would like to acknowledge Professor S. The ion irradiation of this research was undertaken in Australian Neutron Science and Technology Organisation (ANSTO). This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF). acknowledges the support from the Australian Research Council Discovery Projects (DP200102477 and DP220103783). acknowledge the funding support from the Australian Research Council Centre of Excellence in Future Low Energy Electronics Technologies (CE170100039). T1 - Increased phase coherence length in a porous topological insulatorĪ.N., G.A., J.K., M.T.E., D.L.C., D.C., A.R.H., and M.S.F. & Daeneke, T.Īustralian Research Council (ARC), Monash University – Internal School Contribution, Monash University – Internal Department Contribution, Monash University – Internal Faculty Contribution, Monash University – Internal University Contribution, University of Wollongong, University of Queensland, Tsinghua University, University of New South Wales (UNSW), Australian National University (ANU), RMIT University, Swinburne University of Technology M., Tang, M., Karel, J., Nguyen, T., Adam, S., Granville, S., Kumar, P. C., Krausz, F., Littlewood, P., MacDonald, A., Neto, A., Oezyilmaz, B., Paglione, J., Phillips, W., Spielman, I., Tadich, A., Xue, Q., Cole, J., Perali, A., Neilson, D., Sek, G., Gaston, N., Hodgkiss, J. A., Hamilton, A., Helmerson, K., Klochan, O., Medhekar, N., Ostrovskaya, E., Parish, M., Schiffrin, A., Seidel, J., Sushkov, O., Valanoor, N., Vale, C., Wang, X., Galitskiy, V., Gurarie, V., Hannon, J., Höfling, S., Hone, J., Rule, K. ARC Centre of Excellence in Future Low-energy Electronics Technologiesįuhrer, M., Bao, Q., Culcer, D., Davis, M., Davis, J.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |